Carbon materials can also be used in energy devices such as power semiconductors and solar cells.
Utilization of diamond and carbon film
Power semiconductors are suitable for use with diamonds (Figure A-1). Since the breakdown electric field and carrier mobility are much larger than SiC and GaN, power semiconductors using diamond are superior in pressure resistance and work efficiency. In the past, the single crystal diamond substrate had a diameter of only 3 to 4 mm, but with the improvement of the crystal growth method, "the diameter of 13 mm has been achieved" (Deer Director Lu Tianzhen, Deputy Director of the Diamond Research Center of the Industrial Technology Research Institute) .
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Figure A-1: ​​High-performance power semiconductors using diamonds (a) Diamond diodes formed on a 13 mm-diameter substrate by the Diamond Research Center of the Japan Industrial Technology Research Institute. The center is provided by Lutian Zhenyi. (Click to enlarge)
For solar cells, it has become possible to use high-efficiency cells with carbon films (Figure A-2). The University of Central Japan has developed an autonomous plasma CVD method that can change the band gap of carbon films. If this method is used to superimpose different cells with different band gaps, then "a solar cell unit that exceeds the amorphous Si thin film unit at a low cost manufacturing efficiency will become a reality" (Minino Justice, Professor of the Department of Electronic Information Engineering, Central University of Engineering). (Reporter: Da Xia Yi)
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Figure A-2: The solar cell is fabricated using a carbon film to achieve a conversion efficiency of 2.28%. Professor Ye Yezheng of the Department of Electronic Information Engineering, Faculty of Engineering, Central University of Japan.
Utilization of diamond and carbon film
Power semiconductors are suitable for use with diamonds (Figure A-1). Since the breakdown electric field and carrier mobility are much larger than SiC and GaN, power semiconductors using diamond are superior in pressure resistance and work efficiency. In the past, the single crystal diamond substrate had a diameter of only 3 to 4 mm, but with the improvement of the crystal growth method, "the diameter of 13 mm has been achieved" (Deer Director Lu Tianzhen, Deputy Director of the Diamond Research Center of the Industrial Technology Research Institute) .
Figure A-1: ​​High-performance power semiconductors using diamonds (a) Diamond diodes formed on a 13 mm-diameter substrate by the Diamond Research Center of the Japan Industrial Technology Research Institute. The center is provided by Lutian Zhenyi. (Click to enlarge)
For solar cells, it has become possible to use high-efficiency cells with carbon films (Figure A-2). The University of Central Japan has developed an autonomous plasma CVD method that can change the band gap of carbon films. If this method is used to superimpose different cells with different band gaps, then "a solar cell unit that exceeds the amorphous Si thin film unit at a low cost manufacturing efficiency will become a reality" (Minino Justice, Professor of the Department of Electronic Information Engineering, Central University of Engineering). (Reporter: Da Xia Yi)
Figure A-2: The solar cell is fabricated using a carbon film to achieve a conversion efficiency of 2.28%. Professor Ye Yezheng of the Department of Electronic Information Engineering, Faculty of Engineering, Central University of Japan.
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